Highly Efficient Floating Field Rings for SiC Power Electronic Devices - A Systematic Experimental Study
نویسندگان
چکیده
A systematic experimental study is conducted on floating field rings (FFR) incorporated into 4H-SiC junction barrier Schottky (JBS) diodes across four voltage ratings 650, 1200, 1700 and 3300V, in pursuit of highly efficient FFR designs. 30 designs 3 categories are studied for each rating, the measured breakdown (Vbr) JBS divided by ring system width (W) taken as figure merit (FOM) design. The influence spacing, number Vbr detail. It found that initial spacing (S1) critical determining highest achievable a certain design, its optimum value increases rating increases. TCAD simulation verifies importance S1. For with small width, subsequent can also become important. Ring does not have definitive effect, saturates beyond number. design may render FOM. Even style appropriate spacings be advantageous likely due to less susceptibility variation oxide charge, more tolerance fabrication error, well ease
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ژورنال
عنوان ژورنال: Key Engineering Materials
سال: 2023
ISSN: ['1662-9809', '1013-9826', '1662-9795']
DOI: https://doi.org/10.4028/p-0z5887